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BSS84 P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features * * * * * Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage E SOT-23 A D B G TOP VIEW Dim A C Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0 Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8 B C D E G H J K L S D G H K J Drain L M Mechanical Data * * * * * * * * Case: SOT-23, Molded Plastic Case material - UL Flammability Rating 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Marking (See Page 2): K84 Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approx.) Gate M a Source All Dimensions in mm Maximum Ratings Drain-Source Voltage @ TA = 25C unless otherwise specified Symbol VDSS VDGR Continuous Continuous VGSS ID Pd RqJA Tj, TSTG BSS84 -50 -50 20 -130 300 417 -55 to +150 Units V V V mA mW C/W C Characteristic Drain-Gate Voltage RGS 20KW Gate-Source Voltage Drain Current (Note 1) Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Electrical Characteristics Characteristic OFF CHARACTERISTICS (Note 2) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Turn-Off Delay Time @ TA = 25C unless otherwise specified Symbol BVDSS IDSS IGSS VGS(th) RDS (ON) gFS Ciss Coss Crss tD(ON) tD(OFF) Min -50 3/4 3/4 3/4 3/4 -0.8 3/4 .05 3/4 3/4 3/4 3/4 3/4 Typ 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 10 18 Max 3/4 -15 -60 -100 10 -2.0 10 3/4 45 25 12 3/4 3/4 Unit V A A nA nA V W S pF pF pF ns ns VDD = -30V, ID = -0.27A, RGEN = 50W, VGS = -10V VDS = -25V, VGS = 0V f = 1.0MHz Test Condition VGS = 0V, ID = -250A VDS = -50V, VGS = 0V, TJ = 25C VDS = -50V, VGS = 0V, TJ = 125C VDS = -25V, VGS = 0V, TJ = 25C VGS = 20V, VDS = 0V VDS = VGS, ID = -1mA VGS = -5V, ID = 0.100A VDS = -25V, ID = 0.1A Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. Short duration test pulse used to minimize self-heating effect. DS30149 Rev. 5 - 2 1 of 2 www.diodes.com BSS84 Ordering Information Device BSS84-7 Notes: (Note 3) Packaging SOT-23 Shipping 3000/Tape & Reel 3. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K84 K84 = Product Type Marking Code YM = Date Code Marking Y = Year ex: N = 2002 M = Month ex: 9 = September Date Code Key Year Code Month Code 1998 J Jan 1 1999 K Feb 2 2000 L March 3 2001 M Apr 4 2002 N May 5 2003 P Jun 6 2004 R Jul 7 2005 S Aug 8 2006 T Sep 9 2007 U Oct O 2008 V Nov N 2009 W Dec D DS30149 Rev. 5 - 2 2 of 2 www.diodes.com YM BSS84 |
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